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hexfet power mosfet ordering information: see detailed ordering and shipping information on the last page of this data sheet. application(s) micro3 tm (sot-23) irlml6344trpbf d s g 3 1 2 ? load/ system switch features and benefits benefits v ds 30 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 29 m r ds(on) max (@v gs = 2.5v) 37 m absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 w c/w a max. 5.0 4.0 -55 to + 150 12 0.01 30 1.3 0.8 25 low r dson (<29m ) lower conduction losses industry-standard sot-23 package multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen results in environmentally friendly msl1, consumer qualification increased reliability

form quantity irlml6344trpbf mi c r o3 ? (sot-23) tape and reel 3000 irlml6344trpbf base part number package type standard pack orderable part number

d s g electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c ??? 22 29 ??? 27 37 v gs(th) gate threshold voltage 0.5 0.8 1.1 v i dss ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.7 ??? gfs forward transconductance 19 ??? ??? s q g total gate charge ??? 6.8 ??? q gs gate-to-source charge ??? 0.3 ??? q gd gate-to-drain ("miller") charge ??? 2.4 ??? t d(on) turn-on delay time ??? 4.2 ??? t r rise time ??? 5.6 ??? t d(off) turn-off delay time ??? 22 ??? t f fall time ??? 9.1 ??? c iss input capacitance ??? 650 ??? c oss output capacitance ??? 65 ??? c rss reverse transfer capacitance ??? 46 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 10 15 ns q rr reverse recovery charge ??? 3.8 5.7 nc di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = 5.0a, v gs = 0v integral reverse p-n junction diode. v ds = 10v, i d = 5.0a i d = 5.0a i d = 1.0a t j = 25c, v r = 15v, i f =1.3a mosfet symbol showing the v ds =15v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 5.0a v ds = v gs , i d = 10 a v ds =24v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c r ds(on) v gs = 2.5v, i d = 4.0a static drain-to-source on-resistance drain-to-source leakage current a m v dd =15v na nc ns pf a 1.3 25 ??? ??? ??? ??? notes through are on page 10
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fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1.0 1.5 2.0 2.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.0a v gs = 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s p ulse width tj = 25c 1.4v vgs top 10v 4.5v 2.5v 2.0v 1.9v 1.7v 1.5v bottom 1.4v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.4v 60 s pulse width tj = 150c vgs top 10v 4.5v 2.5v 2.0v 1.9v 1.7v 1.5v bottom 1.4v

fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 4.0 8.0 12.0 16.0 20.0 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 5.0a 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit #
1 0.1 % # $% # + - # 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 1.0 2.0 3.0 4.0 5.0 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a
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fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 0 1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 5.0a t j = 25c t j = 125c 0 10 20 30 40 i d , drain current (a) 0 20 40 60 80 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v
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fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10 a i d = 250 a 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w )
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e e1 e d a b 0.15 [0.006] e1 1 2 3 m cba 5 6 6 5 notes: b a1 3x a a2 a b c m 0.20 [0.008] 0.10 [0.004] c c 1. dimensioning & tolerancing per ansi y14.5m-1994 2. dimensions are shown in millimeters [inches]. 3. controlling dimension: millimeter. 4. datum plane h is located at the mold parting line. 5. datum a and b to be determined at datum plane h. 6. dimensions d and e1 are measured at datum plane h. dimensions does not include mold protrusions or interlead flash. mold protrusions or interlead flash shall not exceed 0.25 mm [0.010 inch] per side. 7. dimension l is the lead length for soldering to a substrate. 8. outline conforms to jedec outline to-236 ab. 0.89 1.12 symbol max min a1 b 0.01 0.10 c 0.30 0.50 d 0.08 0.20 e 2.80 3.04 e1 2.10 2.64 e 1.20 1.40 a 0.95 bsc l 0.40 0.60 08 millimeters a2 0.88 1.02 e1 1.90 bsc ref 0.54 l1 bsc 0.25 l2 bsc ref

inches 8 0
0.0004 min max
dimensions 0.972 1.900 recommended footprint 0.802 0.950 2.742 3x l c l2 h 4 l1 7 notes : this part marking information applies to devices produced after 02/26/2001 ww = (27-52) if pre ceded by a let t er c h k j e f g d 0 2010 ye ar b a y 2007 2008 2009 2006 2005 2003 2004 2001 2002 5 7 9 8 6 3 4 1 2 c 29 z 52 50 51 x y 30 d x 24 w wor k we e k 27 28 b a 26 25 z y 03 04 01 02 c d a b date code marking instructions ww = (1-26) if prece de d by l as t digit of cale ndar year ye ar y w we e k wor k 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 2010 2007 2008 2009 2006 2005 2003 2004 2001 2002 2020 2017 2018 2019 2016 2015 2013 2014 2011 2012 f = irlml6401 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 h = irlml5203 g = irlml2502 note: a line above the work week (as s hown here) indicates l ead - f ree. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246

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2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. surface mounted on 1 in square cu board refer to application note #an-994. msl1 (per ipc/jedec j-std-020d ??? ) rohs compliant yes micro3 ? (sot-23) qualification information ? moisture sensitivity level qualification level consumer ?? (per jedec jesd47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? formatted the data sheet using the ir corporate template. ? updated part marking on page 8. ? corrected typical output curve fig.2 on page 3 (used to be exact same as fig.1) 12/19/2014

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